1993 International Conference on Solid State Devices and Materials
1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
1993 International Conference on Solid State Devices and Materials
1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
[S-II-5]Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET
K. Ohmi、K. Nakamura、T. Futatsuki、K. Makihara、T. Ohmi(1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)
