1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
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International Conference on Solid State Devices and Materials
1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan

[S-III-4]Influence of the Structural Transition Layer on the Reliability of Thin Gate Oxides

Eiji HASEGAWA、Koichi AKIMOTO、Masaru TSUKIJI Taishi KUBOTA、Akihiko ISHITANI(1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1993.S-III-4
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