2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-2-4]Comparison of the Interconnect Capacitances of Various SRAM Cell Layouts To Achieve High Speed, Low Power SRAM Cells
Y. Tsukamoto、K. Nii、Y. Yamagami、T. Yoshizawa、S. Imaoka、T. Suzuki、A. Shibayama、H. Makino(1.LSI Product Technology Unit , Renesas Technology Corp.、2.Corporate Development Div., Semiconductor Company, Matsushita Electric Industrial Corp.、3.Electronic Devices Design Center, Renesas Device Design Corp.)
