International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

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International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

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[A-1-1]Dual workfunction metal-gate FinFET devices fabricated using total gate silicidation

Jakub Kedzierski、Edward Nowak、Meikei Ieong、Thomas Kanarsky、Diane Boyd(1.IBM Semiconductor Research and Development Center (SRDC) Research Division、2.Microelectronics Division)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-1-2]Influences of Gate-Poly Impurity Concentration on Inversion-Layer Mobility in MOSFETs with Ultrathin Gate Oxide Film

Junji Koga、Takamitsu Ishihara、Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-1-3]New Self-aligned Metal-gate MOSFETs Using Aluminum Substitution Technology

S. Nakamura、H. Shido、T. Kurahashi、S. Kishii、T. Nagata、B. Kumasaka、T. Usuki、S. Sato、Y. Mishima(1.Fujitsu Laboratories Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-1-4]Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET

Takamitsu Ishihara、Junji Koga、Shinichi Takagi、Kazuya Matsuzawa(1.Advanced LSI Thechnology Laboratory, Research and Development Center,Toshiba corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-1-5]Direct evaluation of an interfacial layer in high-k gate dielectrics by 1/f noise measurements

Tsuyoshi Ishikawa、Shinpei Tsujikawa、Shin-ichi Saito、Digh Hisamoto、Shin’ichiro Kimura(1.Central Research Laboratory, Hitachi, Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-1]Enhancement of VTH Degradation under NBT Stress due to Hole Capturing

Yuichiro Mitani、Makoto Nagamine、Hideki Satake、A. Toriumi(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation、2.Department of Materials Science, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-2]New Mechanism for Negative-Bias-Temperature Instability and Its Impact on Scaling of pMOSFETs

Da-Yuan Lee、Horng-Chih Lin、Chi-Chun Chen、Chao-Hsin Chien、Tiao-Yuan Huang、Tahui Wang、Tze-Liang Lee、Shih-Chang Chen、Mong-Song Liang(1.Institute of Electronics, National Chiao-Tung University、2.National Nano Device Laboratories、3.Taiwan Semiconductor Manufacturing Company)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-3]Origin of Enhanced Thermal Noise for 100nm-MOSFETs

S. Hosokawa、Y. Shiraga、H. Ueno、M. Miura-Mattausch、H.J. Mattausch、T. Ohguro、S. Kumashiro、M. Taguchi、H. Masuda、S. Miyamoto(1.Graduate School of Advanced Sciences of Matter、2.Research Center for Nanodevices and Systems, Hiroshima University、3.Semiconductor Technology Academic Research Center)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-4]Comparison of the Interconnect Capacitances of Various SRAM Cell Layouts To Achieve High Speed, Low Power SRAM Cells

Y. Tsukamoto、K. Nii、Y. Yamagami、T. Yoshizawa、S. Imaoka、T. Suzuki、A. Shibayama、H. Makino(1.LSI Product Technology Unit , Renesas Technology Corp.、2.Corporate Development Div., Semiconductor Company, Matsushita Electric Industrial Corp.、3.Electronic Devices Design Center, Renesas Device Design Corp.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-5]Eliminating Threshold Voltage Offset of PMOSFETs in High-Density DRAM

Norikatsu Takaura、Riichiro Takemura、Hideyuki Matsuoka、Ryo Nagai、Satoru Yamada、Hisao Asakura、Shin’ichiro Kimura(1.Central Research Laboratory, Hitachi, Ltd.、2.Advanced Device Development Gr., Elpida Memory, Inc.、3.Information & Control System Division, Computer Systems Quality Assurance Sect, Hitachi, Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-2-6]Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park、H.D. Lee、J.S. Kim、S.H Baek、H. Chang、J.H. Lee、K.C. Kim、B.S. Song、H.K. Bae、M.O. Kim、H.S. Lee、Y.S. Kang、D.B. Kim(1.System IC R&D Division, Hynix Semiconductor Inc.、2.Dept. of Electronics Engineering, Chungnam National University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-3-1]Integration Issues of HfO2-Al2O3 Laminate for Gate and Capacitor Dielectric

Jong-Ho Lee(1.Advanced Process Development Team, System LSI Division, Samsung Electronics Co., Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-3-2]Influence of Carrier Velocity Related Parameters on the Propagation Delay Time of CMIS Inverters with High-k Gate Dielectrics

Mizuki Ono、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-3-3]A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji、A. Mutoh、K. Torii、R. Mitsuhashi、A. Horiuchi、T. Maeda、H. Itoh、T. Kawahara、K. Hayashi、T. Sasaki、N. Kasai、H. Kitajima、M. Yasuhira、T. Arikado(1.Semiconductor Leading Edge Technologies, Inc.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-3-4]A Novel Approach for Determination of Tunneling Mass, meff - Conduction Band Offset Energy, EB, Products for Advanced Gate Dielectrics

C.L. Hinkle、C. Fulton、R.J. Nemanich、G. Lucovsky(1.North Carolina State University, Department of Physics)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-4-1]1300nm-range GaInNAsSb VCSELs

A. Kasukawa、H. Shimizu、C. Setiagung、M. Ariga、Y. Ikenaga、K. Kumada、T. Hama、N. Iwai(1.The Furukawa Electric Co., Ltd., Yokohama R&D Laboratories)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-4-2]Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Hsin-Chieh Yu、Shoou-Jinn Chang、Yan-Kuin Su、Chia-Pin Sung、Hong-Pin Yang、Chun-Yuan Huang、Yu-Wei Lin、Jin-Mei Wang、Fang-I Lai、Hao-Chung Kuo(1.Institute of Microelectronics, National Cheng Kung University、2.Opto-Electronics&System Laboratory, Industrial Technology Research Institute、3.Institute of Electronics Engineering, National Tsing Hua University、4.Institute of Eletro-Optical Engineering, National Chiao Tung University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-4-3]High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama、Daijiro Inoue、Shingo Kameyama、Atsushi Tajiri、Masayuki Shono、Minoru Sawada、Akira Ibaraki(1.Materials and Devices Development Center, Sanyo Electric Co., Ltd.、2.LED Division, Tottori Sanyo Electric Co., Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-4-4]High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW

Yasuaki Yoshida、Harumi Nishiguchi、Motoko Sasaki、Sinji Abe、Akihito Ohno、Masayoshi Takemi、Ken-ichi Ono、Jun-ichi Horie、Hiromasu Matsuoka、Yasunori Miyazaki、Tetsuya Yagi、Etuji Omura(1.High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-4-5L]High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo、Il Ki Han、Jung Il Lee、Ji Chai Jeong(1.Nano Device Research Center, Korea Institute of Science and Technology、2.Dept. of Radio Engineering, Korea University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-5-1]Monolithic PD-EAM Optical Gates for Ultrafast Signal Processing

Satoshi Kodama、Toshihide Yoshimatsu、Hiroshi Ito(1.NTT Photonics Laboratories, NTT Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-5-2]InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes

Bangkeun Lee、Yongjoo Song、Kyounghoon Yang(1.Division of Electrical Engineering Dept. of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST))

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-5-3]Solid-State Optical Routing Device Utilizing Minority Carrier Drift

Hironori Tsukamoto、Thomas D. Boone、Jerry M. Woodall(1.Yale University, Department of Electrical Engineering)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-5-4]Analysis of AlGaAs/GaAs Heterojunction Photodetector with a Two-Dimensional Channel Modulated by Gate Voltage

Hongjoo Song、Hoon Kim(1.NANO scale quantum devices Research Center, Korea Electronics Technology Institute)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-5-5]Enhancement of Magneto-Optic Effect in Magneto-Optic Waveguide with Low Refractive Index Undercladding Layer

Yuya Shoji、Hideki Yokoi、Tetsuya Mizumoto(1.Tokyo Institute of Technology, Department of Electrical and Electronic Engineering、2.OITDA)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-6-1]ADVANCES IN WIDELY-TUNABLE OPTICAL TRANSMITTERS

Larry A. Coldren(1.Agility Communications and UC-Santa Barbara)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-6-2]40 GHz Actively Mode-Locked DBR Laser Diode Module with an Impedance Matching Circuit

Shin Arahira、Yoh Ogawa(1.Oki Electric Industry Co., Ltd., Advanced Devices Laboratories)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-6-3]Very High Frequency Self-pulsation and Stable Optical Injection Locking for Well-defined Multi-electrode DFB Lasers

Satoshi Nishikawa、Mitsunobu Gotoda、Tetsuya Nishimura、Yasunori Tokuda、Keisuke Matsumoto(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation、3.OITDA)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-6-4]Lasing-Wavelength-Change-Suppression 980 nm Pump Laser Diodes for Metro Applications

Kazushige Kawasaki、Kimio Shigihara、Hiromasu Matsuoka、Yasuhiro Kunitsugu、Tetsuya Yagi、Etsuji Omura、Yasuo Mitsui(1.High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-7-1]High-κ /Oxynitride Gate Dielectric - Searching for Serendipitous Materials -

Masahiko Hiratani、Shin-ichi Saito、Yasuhiro Shimamoto、Shimpei Tsujikawa、Yuichi Matsui、Osamu Tonomura、Kazuyoshi Torii、Jiro Yugami、Shinichiro Kimura(1.Advanced Research Laboratory, Hitachi, Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-7-2]Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics

W. Mizubayashi、N. Yasuda、H. Hisamatsu、H. Ota、K. Tominaga、K. Iwamoto、K. Yamamoto、T. Horikawa、T. Nabatame、A. Toriumi(1.MIRAI-ASRC AIST、2.MIRAI-ASET, AIST、3.Department of Materials Science, The University of Tokyo, Japan)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-7-3]Influence of Dielectric Constant Distribution in Stacked Gate Dielectrics on Electron Mobility in Inversion Layers

Mizuki Ono、Takamitsu Ishihara、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-7-4]Characterization of Soft Breakdown Effects for Post-deposition NH3 Plasma Treated HfO2 Gate Dielectrics

Jer Chyi Wang、De Ching Shie、Tan Fu Lei、Chung Len Lee(1.Department of Electronics Engineering, National Chiao Tung University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-8-1]Schottky Barrier Height Reduction and Drive Current Improvement in Metal Source/Drain MOSFET with Strained-Si Channel

Atsushi Yagishita、Tsu-Jae King、Jeffrey Bokor(1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.University of California at Berkeley, Department of Electrical Engineering and Computer Sciences)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-8-2]Experimental Evidence of Gate-Induced Schottky Barrier Height Lowering due to Image Force in Gated Schottky Diodes

A. Kinoshita、K. Uchida、J. Koga(1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-8-3]Intelligent BSIM4 Model Parameter Extraction for Sub-100 nm MOSFETs era

Yiming Li、Yen-Yu Cho(1.Department of Nano Device Technology, National Nano Device Laboratories、2.Microelectronics and Information Systems Research Center, National Chiao Tung University、3.Department of Computer and Information Science, National Chiao Tung University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-8-4]0.13μm Low-K/Cu Logic CMOS Based Technology for High Performance Analog Devices

J. C. Guo、W.Y. Lien、T.L. Tsai、S.M. Chen、C.M. Wu、Y.C. Sun、Ping Yang(1.Deptartment of Electronics Engineering, National Chiao Tung University、2.Research Development Center, Taiwan Semiconductor Manufacturing Corp)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-9-1]Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie、K. Kita、K. Kyuno、S. Takagi、K. Takasaki、M. Kubota、S. Saito、S. Nishikawa、A. Toriumi(1.Department of Materials Science, School of Engineering, The University of Tokyo、2.Semiconductor Technology Academic Research Center (STARC))

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-9-2]Channel direction impact of (110) surface Si substrate on performance improvement in sub-100 nm MOSFETs

Hidetatsu Nakamura、Tatsuya Ezaki、Toshiyuki Iwamoto、Mitsuhiro Togo、Nobuyuki Ikarashi、Masami Hane、Toyoji Yamamoto(1.Silicon Systems Research Labs., NEC Corporation)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-9-3]Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50nm N-MOSFET by Scanning Tunneling Microscopy

Hidenobu Fukutome、Takashi Saiki、Mitsuaki Hori、Takuji Tanaka、Ryou Nakamura、Hiroshi Arimoto(1.FUJITSU LABORATORIES LTD., Silicon technologies laboratories, Advanced CMOS technology lab.、2.FUJITSU LTD., Advanced LSI development div.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-9-4]High Performance Strained Si/SiGe N-channel MOSFETs: Impact of Alloy Composition and Layer Architecture

SH Olsen、LS Driscoll、KSK Kwa、S Chattopadhay、AG O'Neill(1.School of Electrical, Electronic and Computer Engineering, University of Newcastle, U.K.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-10-1]High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology

Fuminobu Imaizumi、Tomohiko Hayashi、Katsuji Ishii、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi(1.The New Industry Creation Hatchery Center, Tohoku University、2.Graduate school of Engineering, Tohoku University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-10-2]A Novel High Performance Power MOSFET with Split well and Split Poly Structure

Feng-Tso Chien、Kou-Way Tu、Shin-Tzung Su、Ching-Ling Cheng、Dung Jen-Huie、Chung-Yuan Kung、Yen-Chih Huang(1.Dept. of Electronic Engineering, Feng Chia University、2.R&D Dept., Chino-Excel Technology Corp.、3.Dept. of Electrical Engineering, Chung Hsing University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[A-10-3]Optimization of The Ultra-Low Dark Current CMOS Image Sensor Cell Using n+ Ring Reset

Po-Hao Huang、Ya-Chin King(1.Microelectronic Laboratory, Semiconductor Technology Application Research (STAR) Group Department of Electrical Engineering, National Tsing-Hua University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-1-1]Current FeRAM Technology Developments and Scaling towards 3-D Capacitor Cells

Dirk J. Wouters(1.IMEC)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-1-2]32Mb Chain FeRAM - An Overview

Daisaburo Takashima、Thomas Rohr(1.FeRAM Development Alliance, Toshiba Corp. Yokohama, Japan、2.Infineon Technologies Japan K.K., Yokohama, Japan)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-1-3]A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka、Minoru Noda、Masanori Okuyama(1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-1-4]Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

T. Yamada、Y. Kato、S. Koyama、Y. Shimada(1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-1-5]A Low Dielectric Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on IrO2 Substrate for One Transistor Type Ferroelectric Memory Device

Ichirou Takahashi、Hiroyuki Sakurai、Atsuhiko Yamada、Tetsuya Goto、Masaki Hirayama、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi(1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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[B-2-1]Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable FRAM Device

H. H. Kim、J. H. Park、Y. J. Song、N. W. Jang、H. J. Joo、S. K. Kang、S. H. Joo、S. Y. Lee、Kinam Kim(1.Advanced Technology Development Team, Memory Division, Device Solution Network, Samsung Electronics Co. Ltd.)

2003 International Conference on Solid State Devices and Materials2003年9月18日(木)

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