2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
International Conference on Solid State Devices and Materials
2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-2-6]Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park、H.D. Lee、J.S. Kim、S.H Baek、H. Chang、J.H. Lee、K.C. Kim、B.S. Song、H.K. Bae、M.O. Kim、H.S. Lee、Y.S. Kang、D.B. Kim(1.System IC R&D Division, Hynix Semiconductor Inc.、2.Dept. of Electronics Engineering, Chungnam National University)
https://doi.org/10.7567/SSDM.2003.A-2-6