[A-3-3]A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process
H. Ohji、A. Mutoh、K. Torii、R. Mitsuhashi、A. Horiuchi、T. Maeda、H. Itoh、T. Kawahara、K. Hayashi、T. Sasaki、N. Kasai、H. Kitajima、M. Yasuhira、T. Arikado(1.Semiconductor Leading Edge Technologies, Inc.)
