2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-7-2]Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics
W. Mizubayashi、N. Yasuda、H. Hisamatsu、H. Ota、K. Tominaga、K. Iwamoto、K. Yamamoto、T. Horikawa、T. Nabatame、A. Toriumi(1.MIRAI-ASRC AIST、2.MIRAI-ASET, AIST、3.Department of Materials Science, The University of Tokyo, Japan)
