2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-8-1]Schottky Barrier Height Reduction and Drive Current Improvement in Metal Source/Drain MOSFET with Strained-Si Channel
Atsushi Yagishita、Tsu-Jae King、Jeffrey Bokor(1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.University of California at Berkeley, Department of Electrical Engineering and Computer Sciences)
