[A-9-1]Re-Examination on the Universality of Si-MOS Inversion Layer Mobility
H. Irie、K. Kita、K. Kyuno、S. Takagi、K. Takasaki、M. Kubota、S. Saito、S. Nishikawa、A. Toriumi(1.Department of Materials Science, School of Engineering, The University of Tokyo、2.Semiconductor Technology Academic Research Center (STARC))
