2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
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International Conference on Solid State Devices and Materials
2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-1-3]A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka、Minoru Noda、Masanori Okuyama(1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.2003.B-1-3
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