2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
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International Conference on Solid State Devices and Materials
2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜9月18日Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-1-4]Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

T. Yamada、Y. Kato、S. Koyama、Y. Shimada(1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.2003.B-1-4
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