2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan
International Conference on Solid State Devices and Materials
2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan

[A-6-3]Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes: a comparison between pristine and potassium-encapsulated nanotubes

Hideyuki Maki、Satoru Suzuki、Tetsuya Sato、Koji Ishibashi(1.Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University、2.NTT Basic Research Laboratories, NTT Corporation、3.Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN))
https://doi.org/10.7567/SSDM.2006.A-6-3