2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan

[A-7-3]High-PVCR Si/Si1-xGex Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer

Hirotake Maekawa、Yoshihiro Sano、Yoshiyuki Suda(1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)
https://doi.org/10.7567/SSDM.2006.A-7-3
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