2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan
International Conference on Solid State Devices and Materials
2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan

[A-8-4]Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires

D. Moraru、Y. Ono、H. Inokawa、K. Yokoi、R. Nuryadi、H. Ikeda、M. Tabe(1.Research Institute of Electronics, Shizuoka University、2.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation.)
https://doi.org/10.7567/SSDM.2006.A-8-4