2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan

[A-9-3]Low Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-bar Devices

Kei Takashina、Benjamin Gaillard、Yukinori Ono、Yoshiro Hirayama(1.NTT Basic Research Laboratories, NTT Corporation、2.SORST-JST)
https://doi.org/10.7567/SSDM.2006.A-9-3
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