2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
2006 International Conference on Solid State Devices and Materials

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜9月15日PACIFICO Yokohama, Yokohama, Japan

[A-9-5]A Field-Effect Transistor with a Deposited Graphite Thin Film

Hiroshi Inokawa、Masao Nagase、Shigeru Hirono、Touichiro Goto、Hiroshi Yamaguchi、Keiichi Torimitsu(1.Research Institute of Electronics, Shizuoka University、2.NTT Basic Research Laboratories, NTT Corporation、3.NTT Afty Engineering Corporation)
https://doi.org/10.7567/SSDM.2006.A-9-5
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