2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-1-3]Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method

N. Kitano、H. Arimura、S. Horie、T. Hosoi、T. Shimura、H. Watanabe、T. Kawahara、S. Sakashita、Y. Nishida、J. Yugami、T. Minami、M. Kosuda(1.Graduate School of Engineering, Osaka University、2.Renesas Technology Corporation、3.Canon ANELVA Corporation)
https://doi.org/10.7567/SSDM.2007.A-1-3
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