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J.K. Schaeffer、W.J. Taylor、S.B. Samavedam、D.C. Gilmer、D.H. Triyoso、R.I. Hegde、S. Kalpat、C. Capasso、M. Sadd、M. Stoker、A. Haggag、D. Roan、B.E. White Jr.(1.Silicon Technology Solutions、2.Freescale Semiconductor)
K. Tai、S. Yamaguchi、K. Tanaka、T. Hirano、I. Oshiyama、S. Kazi、T. Ando、M. Nakata、M. Yamanaka、R. Yamamoto、S. Kanda、Y. Tateshita、H. Wakabayashi、Y. Tagawa、M. Tsukamoto、H. Iwamoto、M. Saito、N. Nagashima、S. Kadomura(1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation)
N. Kitano、H. Arimura、S. Horie、T. Hosoi、T. Shimura、H. Watanabe、T. Kawahara、S. Sakashita、Y. Nishida、J. Yugami、T. Minami、M. Kosuda(1.Graduate School of Engineering, Osaka University、2.Renesas Technology Corporation、3.Canon ANELVA Corporation)
C. S. Park、S. C. Song、C. Burham、H. B. Park、H. Niimi、B. S. Ju、J. Barnett、C. Y. Kang、P. Lysaght、G. Bersuker、R. Choi、H. K. Park、H. Hwang、B. H. Park、S. Kim、P. Kirsch、B. H. Lee、R. Jammy(1.UT/Austin、2.Samsung Assignee、3.TI Assignee、4.GIST, Korea、5.Poongsan Microtec、6.IBM Assignees)
B. P. Linder、V. Narayanan、V. K. Paruchuri、E. Cartier、S. Kanakasabapathy(1.IBM Semiconductor Research and Development Center, Research Division、2.T. J. Watson Research Center, Yorktown Heights)
Hiroshi Matsubara、Hiroshi Kumagai、Satoshi Sugahara、Mitsuru Takenaka、Shin-ichi Takagi(1.Graduate School of Frontier Science, The University of Tokyo、2.Graduate School of Science and Technology, Tokyo Institute of Technology、3.School of Engineering, The University of Tokyo)
Sho Suzuki、Koji Kita、Hideyuki Nomura、Tomonori Nishimura、Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
N. Taoka、Y. Yamashita、M. Harada、K. Ikeda、T. Yamamoto、N. Sugiyama、S. Takagi(1.MIRAI-ASRC、2.MIRAI-ASET、3.The University of Tokyo)
Tatsuro Maeda、Yukinori Morita、Shinichi Takagi(1.MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science and Technology (ASRC-AIST), AIST Tsukuba Central 4、2.The University of Tokyo)
Toshitake Takahashi、Yi Zhao、Tomonori Nishimura、Koji Kita、Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
Ruilong Xie、Chunxiang Zhu(1.Silicon Nano Device Lab, Dept of Electrical and Computer Engineering National University of Singapore)
S. Zafar、Y. H. Kim、V. Paruchuri、V. Narayanan、B. Doris、A. Callegari、J. Stathis、T. Ning(1.IBM Semiconductor Research & Development Center (SRDC), Research Division)
Motoyuki Sato、Kikuo Yamabe、Kenji Shiraishi、Seiichi Miyazaki、Keisaku Yamada、Chihiro Tamura、Ryu Hasunuma、Seiji Inumiya、Takayuki Aoyama、Yasuo Nara、Yuzuru Ohji(1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Univ. of Tsukuba、3.Hiroshima Univ.、4.Waseda Univ.)
Takashi Onizawa、Motoyuki Sato、Takayuki Aoyama、Takahisa Eimori、Yasuo Nara、Yuzuru Ohji(1.Semiconductor Leading Edge Technologies, Inc.)
C. Y. Kang、P. Kirsch、D. Heh、C. Young、P. Sivasubramani、G Bersuker、S.C. Song、R. Choi、B. H. Lee、J. Lichtenwalner、J. S. Jur、A. I. Kingon、R. Jammy(1.IBM Assignee、2.Dept. of Materials Science and Engineering, North Carolina State University)
T. Noda、W. Vandervorst、S. Felch、V. Parihar、C. Vrancken、S. Severi、T. Y. Hoffmann、A. Falpin、B. van Daele、T. Jannssens、H. Bender、P. Eyben、M. Niwa、R. Schreutelkamp、F. Nouri、P. P. Absil、M. Jurczak、K. De Meyer、S. Biesemans(1.Matsushita Electric Industrial Co., Ltd.、2.IMEC、3.Applied Materials)
Nobuyuki Ikarashi、Makiko Oshida、Makoto Miyamura、Motofumi Saitoh、Akira Mineji、Seiichi Shishiguchi(1.NEC Corporation, Device Platforms Research Laboratories、2.NEC Electronics Corporation, Process Technology Division)
N. Loubet、S. Denorme、A. Pouydebasque、F. Leverd、P. Gouraud、C. Tallaron、T. Skotnicki、D. Dutartre(1.STMicroelectronics、2.NXP Semiconductors)
Kyong Taek Lee、Chang Yong Kang、Rino Choi、Seung Chul Song、Byoung Hun Lee、Hi-Deok Lee、Yoon-Ha Jeong(1.Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH)、2.SEMATECH、3.IBM assignee、4.Dept. of Electronics Engineering, Chungnam National Univ, Korea、5.University of Texas at Austin)
Minseok Jo、Hokyung Park、Man Chang、Hyung-Suk Jung、Jong-Ho Lee、Hyunsang Hwang(1.Gwangju Institute of Science and Technology、2.Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd., Korea.)
Koji Eriguchi、Masayuki Kamei、Daisuke Hamada、Kenji Okada、Kouichi Ono(1.Graduate School of Engineering, Kyoto University、2.MIRAI-AIST)
N. Mise、T. Matsuki、T. Watanabe、T. Robata、T. Morooka、T. Eimori、Y. Nara(1.Semiconductor Leading Edge Technologies, Inc.)
Takashi Nakayama(1.Department of Physics, Chiba University)
Wenwu Wang、Koji Akiyama、Wataru Mizubayashi、Minoru Ikeda、Hiroyuki Ota、Toshihide Nabatame、Akira Toriumi(1.MIRAI-ASRC、2.MIRAI-ASET、3.The University of Tokyo)
Tomonori Nishimura、Koji Kita、Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
K. Shiraishi、Y. Akasaka、G. Nakamura、M. Kadoshima、H. Watanabe、K. Ohmori、T. Chikyow、K. Yamabe、Y. Nara、Y. Ohji、K. Yamada(1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba、2.CREST, Japan Science and Technology Agency、3.Semiconductor Leading Edge Technology Inc.、4.Graduate School of Engineering, Osaka University、5.Nanotechnology Research Laboratories, Waseda University、6.National Institute of Materials Science、7.Present address: Tokyo Electron Inc.)
Dai Ishikawa、Satoshi Kamiyama、Atsushi Sano、Sadayoshi Horii、Takayuki Aoyama、Yasuo Nara(1.Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.、2.Research Dept. 2, Semiconductor Equipment System Lab., Hitachi Kokusai Electric Inc.)
I. Oshiyama、K. Tai、T. Hirano、S. Yamaguchi、K. Tanaka、Y. Hagimoto、T. Uemura、T. Ando、K. Watanabe、R. Yamamoto、S. Kanda、J. Wang、Y. Tateshita、H. Wakabayashi、Y. Tagawa、M. Tsukamoto、H. Iwamoto、M. Saito、M. Oshima、S. Toyoda、N. Nagashima、S. Kadomura(1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation、2.Graduate School of Engineering, University of Tokyo)
X.P. Wang、M.-F. Li、H.Y. Yu、J.J. Yang、C.X. Zhu、W.S. Hwang、W.Y. Loh、A.Y. Du、J.D. Chen、Albert Chin、S. Biesemans、G.Q. Lo、D.-L. Kwong(1.SNDL, ECE Dept, National University of Singapore、2.Institute of Microelectronics, Singapore、3.IMEC、4.Dept. of Microelectronics, Fudan University、5.Dept. of Electronics Eng., Nat’l Chiao-Tung Univ.)
M. Muller、C. Hobbs、A. Zauner、S. Barnola、T. Salvetat、S. Lhostis、S. Couderc、P. Perreau、D. H. Triyoso、M. Raymond、E. Luckowski、M. Rafik、A. Cathignol、G. Ribes、D. Fleury、K. Romanjek、S. Pokrant、S. Jullian、P. Morin、M. Aminpur、P. Gouraud、C. Laviron、S. Zoll、P. Garnier、F. Salvetti(1.NXP Semiconductors、2.Freescale、3.STMicroelectronics、4.NXP Semiconductors, Research、5.CEA-LETI、6.Freescale Semiconductor Inc.)
X.P. Wang、J.J. Yang、H.Y. Yu、M.-F. Li、J.D. Chen、R.L. Xie、C.X. Zhu、A.Y. Du、P.C. Lim、Andy Lim、Y.Y. Mi、Doreen M.Y. Lai、W.Y. Loh、S. Biesemans、G.Q. Lo、D.-L. Kwong(1.SNDL, ECE Dept, National University of Singapore、2.Institute of Microelectronics、3.IMEC、4.Dept. of Microelectronics, Fudan University、5.Institute of Material Research and Engineering)
Andy E.-J. Lim、Rinus T.P. Lee、Alvin T.Y. Koh、Ganesh S. Samudra、Dim-Lee Kwong、Yee-Chia Yeo(1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore)
Masakatsu Tsuchiaki、Akira Nishiyama(1.Corporate Research & Development Center, Toshiba Corporation.)
K. Yamamoto、S. Sakashita、Y. Sato、M. Inoue、M. Anma、T. Oosuka、J. Yugami(1.Matsushita Electric Industrial Co., Ltd.、2.RENESAS technology Corp.)
G. Bidal、M. Muller、S. Denorme、D. Aime、M. Rafik、A. Cathignol、G. Ribes、S. Pokrant、P. Gouraud、T. Kormann、G. Chabanne、C. Blanc、S. Bonnetier、D. Barge、C. Laviron、A. Tarnowka、G. Ghibaudo、F. Boeuf、T. Skotnicki(1.NXP Semiconductors、2.STMicroelectronics、3.Freescale、4.CEA-LETI、5.IMEP)
Keiji Ikeda、Noriyuki Taoka、Yoshimi Yamashita、Masatomi Harada、Kunihiro Suzuki、Toyoji Yamamoto、Naoharu Sugiyama、Shin-ichi Takagi(1.MIRAI-ASET、2.MIRAI-ASRC、3.The University of Tokyo)
H. Zang、W. Y. Loh、J. D. Ye、T. H. Loh、G. Q. Lo、Byung Jin Cho(1.Silicon Nano Device Lab, Dept of ECE, National University of Singapore、2.Institute of Microelectronics)
Jeong-Hyong Yi、Saeroonter Oh、H. -S. Philip Wong(1.Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University)
Rui Li、S. J. Lee、D. Z. Chi、M. H. Hong、D. -L. Kwong(1.Silicon Nano Device Lab, Department of ECE, National University of Singapore、2.Institute of Materials Research and Engineering、3.Laser Microprocessing Lab, Department of Electrical and Computer Engineering, National University of Singapore、4.Institute of Microelectronics)
Grace Huiqi Wang、Eng-Huat Toh、Keat-Mun Hoe、S. Tripathy、S. Balakumar、Guo-Qiang Lo、Ganesh Samudra、Yee-Chia Yeo(1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore)
S. S. Chung、D. C. Huang、C. S. Lai、C. H. Tsai、P. W. Liu、Y. H. Lin、C. T. Tsai、G. H. Ma、S. C. Chien、S. W. Sun(1.Department of Electronic Engineering, National Chiao Tung University, Taiwan、2.Chang-Gung University, Taiwan、3.United Microelectronics Corporation (UMC), Central R&D Division, Taiwan)
R. Clerc、Q. Rafhay、M. Ferrier、P. Palestri、G. Ghibaudo、L. Selmi(1.IMEP, Minatec-INPG、2.DIEGM, University of Udine)
Hideaki Tsuchiya、Shin-ichi Takagi(1.Kobe University, Graduate School of Engineering、2.MIRAI-ASRC、3.The University of Tokyo, Graduate School of Frontier Science)
Q. Rafhay、P. Palestri、D. Esseni、R. Clerc、L. Selmi(1.IMEP, Minatec-INPG、2.DIEGM, University of Udine)
Shuichi Toriyama、Nobuyuki Sano(1.Advanced LSI Technology Laboratory, Toshiba Corporation、2.Institute of Applied Physics, University of Tsukuba)
Gennady Mil'nikov、Nobuya Mori、Yoshinari Kamakura、Tatsuya Ezaki(1.Osaka University, Department of Electrical, Electronic and Informatics Engineering、2.Hiroshima University)
H. Fitriawan、S. Souma、M. Ogawa(1.Graduate School of Science and Technology, Kobe University、2.Department of Electrical and Electronics Engineering, Kobe University)
Kiyotaka Imai(1.Advanced Device Development Division, NEC Electronics Corporation)
J.-P. Han、Y. M. Lee、H. Utomo、R. Lindsay、M. Eller、J.C. Kim、V. Sardesai、V. Chan、S. Fang、J. Holt、T.N. Adam、H. Zhuang、W. Wille、Z. Lun、H. Wang、T. Dyer、J. Yan、O.J. Kwon、O.S. Kwon、C.W. Lai、T.J. Tang、S.S. Tan、J. Yuan、J. Li、H. Ng、H. Shang、J. Sudijono、D. Schepis、M. Ieong、Y. Li、J.H. Ku、A. Gutmann、M. Hierlemann(1.Infineon Technologies AG、2.Chartered Semiconductor Manufacturing Limited、3.IBM Semiconductor Research and Technology Group、4.Samsung Elec. Co. Alliances at IBM Semiconductor Research and Development Center (SRDC))
T. Miyashita、J. Ogura、T. Owada、T. Sakuma、H. Nomura、H. Miyaoka、A. Hasegawa、S. Yamaguchi、S. Satoh(1.Fujitsu Laboratories Ltd.、2.Fujitsu Limited)
