2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-1]A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates

S. Zafar、Y. H. Kim、V. Paruchuri、V. Narayanan、B. Doris、A. Callegari、J. Stathis、T. Ning(1.IBM Semiconductor Research & Development Center (SRDC), Research Division)
https://doi.org/10.7567/SSDM.2007.A-3-1
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