[A-3-2]Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
Motoyuki Sato、Kikuo Yamabe、Kenji Shiraishi、Seiichi Miyazaki、Keisaku Yamada、Chihiro Tamura、Ryu Hasunuma、Seiji Inumiya、Takayuki Aoyama、Yasuo Nara、Yuzuru Ohji(1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Univ. of Tsukuba、3.Hiroshima Univ.、4.Waseda Univ.)
