2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-3]Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs

Takashi Onizawa、Motoyuki Sato、Takayuki Aoyama、Takahisa Eimori、Yasuo Nara、Yuzuru Ohji(1.Semiconductor Leading Edge Technologies, Inc.)
https://doi.org/10.7567/SSDM.2007.A-3-3
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