2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-5-2]Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs
Nobuyuki Ikarashi、Makiko Oshida、Makoto Miyamura、Motofumi Saitoh、Akira Mineji、Seiichi Shishiguchi(1.NEC Corporation, Device Platforms Research Laboratories、2.NEC Electronics Corporation, Process Technology Division)
