2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-6-2]The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET

Minseok Jo、Hokyung Park、Man Chang、Hyung-Suk Jung、Jong-Ho Lee、Hyunsang Hwang(1.Gwangju Institute of Science and Technology、2.Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd., Korea.)
https://doi.org/10.7567/SSDM.2007.A-6-2
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