2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-6-3]A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics

Koji Eriguchi、Masayuki Kamei、Daisuke Hamada、Kenji Okada、Kouichi Ono(1.Graduate School of Engineering, Kyoto University、2.MIRAI-AIST)
https://doi.org/10.7567/SSDM.2007.A-6-3
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