2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-8-1]Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique
Dai Ishikawa、Satoshi Kamiyama、Atsushi Sano、Sadayoshi Horii、Takayuki Aoyama、Yasuo Nara(1.Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.、2.Research Dept. 2, Semiconductor Equipment System Lab., Hitachi Kokusai Electric Inc.)
