2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-8-4]Highly Manufacturable and Cost-effective Single TaxC / HfxZr(1-x)O2 Gate CMOS Bulk Platform for LP Applications at the 45nm Node and Beyond

M. Muller、C. Hobbs、A. Zauner、S. Barnola、T. Salvetat、S. Lhostis、S. Couderc、P. Perreau、D. H. Triyoso、M. Raymond、E. Luckowski、M. Rafik、A. Cathignol、G. Ribes、D. Fleury、K. Romanjek、S. Pokrant、S. Jullian、P. Morin、M. Aminpur、P. Gouraud、C. Laviron、S. Zoll、P. Garnier、F. Salvetti(1.NXP Semiconductors、2.Freescale、3.STMicroelectronics、4.NXP Semiconductors, Research、5.CEA-LETI、6.Freescale Semiconductor Inc.)
https://doi.org/10.7567/SSDM.2007.A-8-4