2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-9-4]Phase and Composition Control of Ni-FUSI gates by N2 I/I with Double Ni-silicidation

K. Yamamoto、S. Sakashita、Y. Sato、M. Inoue、M. Anma、T. Oosuka、J. Yugami(1.Matsushita Electric Industrial Co., Ltd.、2.RENESAS technology Corp.)
https://doi.org/10.7567/SSDM.2007.A-9-4
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