2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-1]High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda、Noriyuki Taoka、Yoshimi Yamashita、Masatomi Harada、Kunihiro Suzuki、Toyoji Yamamoto、Naoharu Sugiyama、Shin-ichi Takagi(1.MIRAI-ASET、2.MIRAI-ASRC、3.The University of Tokyo)
https://doi.org/10.7567/SSDM.2007.B-1-1
PDFダウンロードPDFダウンロード
戻る