2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-3]Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO2 Gate Dielectric

Jeong-Hyong Yi、Saeroonter Oh、H. -S. Philip Wong(1.Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University)
https://doi.org/10.7567/SSDM.2007.B-1-3
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