2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-4]Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO2/Ge Gate Stack
Rui Li、S. J. Lee、D. Z. Chi、M. H. Hong、D. -L. Kwong(1.Silicon Nano Device Lab, Department of ECE, National University of Singapore、2.Institute of Materials Research and Engineering、3.Laser Microprocessing Lab, Department of Electrical and Computer Engineering, National University of Singapore、4.Institute of Microelectronics)
