2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-5]Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
Grace Huiqi Wang、Eng-Huat Toh、Keat-Mun Hoe、S. Tripathy、S. Balakumar、Guo-Qiang Lo、Ganesh Samudra、Yee-Chia Yeo(1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore)
