2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-6]New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains
S. S. Chung、D. C. Huang、C. S. Lai、C. H. Tsai、P. W. Liu、Y. H. Lin、C. T. Tsai、G. H. Ma、S. C. Chien、S. W. Sun(1.Department of Electronic Engineering, National Chiao Tung University, Taiwan、2.Chang-Gung University, Taiwan、3.United Microelectronics Corporation (UMC), Central R&D Division, Taiwan)
