2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜9月21日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-2-4]Schottky Barrier MOSFETs as Resonant Tunneling Devices

Shuichi Toriyama、Nobuyuki Sano(1.Advanced LSI Technology Laboratory, Toshiba Corporation、2.Institute of Applied Physics, University of Tsukuba)
https://doi.org/10.7567/SSDM.2007.B-2-4
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