2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-2]Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETs

M. Sato1、T. Aoyama1、Y. Nara1、Y. Ohji1(1.Selete, Japan)
https://doi.org/10.7567/SSDM.2008.A-2-2
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