2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-2-3]Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric
C. Y. Kang1、C. S. Park1、H. K. Park1、S. C. Song1、R. Choi1、B. H. Park2、B. Woo2、K. T. Lee3、J. Lee4、H. Hwang4、G. Bersuker1、B. H. Lee1、H. H. Tseng1、R. Jammy5(1.SEMATECH、2.Poongsan Microtech, USA、3.POSTECH、4.GIST, Korea、5.IBM Assignee, USA)
