2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-4]Vt Variation Suppressed Al2O3-Capped HfO2 Gate Dielectrics for Low Vt pMISFETs with High-k/Metal Gate Stacks

T. Morooka1、T. Matsuki1、N. Mise1、S. Kamiyama1、T. Nabatame1、T. Eimori1、Y. Nara1、Y. Ohji1(1.Selete, Japan)
https://doi.org/10.7567/SSDM.2008.A-2-4
PDFダウンロードPDFダウンロード
戻る