2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-5]Generation of a New Interface-State Associated with Ultra-Thin Gate Dielectrics/Silicon under Electric Stress

H. Mori1、H. Matsuyama1、S. Watanabe2(1.Fujitsu Microelectronics Ltd.、2.Fujitsu Labs. Ltd., Japan)
https://doi.org/10.7567/SSDM.2008.A-2-5
PDFダウンロードPDFダウンロード
戻る