2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-4]Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong1、D. S. Ang1、S. J. O'Shea2、K. L. Pey1、C. H. Tung3、T. Kawanago4、K. Kakushima4、H. Iwai4(1.Nanyang Tech. Univ.、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore、4.Tokyo Tech., Japan)
https://doi.org/10.7567/SSDM.2008.A-3-4
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