2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-5-1]Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan1、R. Mitsuhashi2、H. Okawa2、N. Sengoku2、T. Schram1、G. Groeseneken1,3、S. Biesemans1、T. Nakabayashi2、A. Ikeda2、M. Niwa2(1.IMEC, Belgium、2.Matsushita Electric Co., Ltd., Japan、3.Katholieke Univ., Belgium)
https://doi.org/10.7567/SSDM.2008.A-5-1
PDFダウンロードPDFダウンロード
戻る