2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-6-1]Self-limiting Growth Behavior of Epitaxial NiSi2 and its Impact on Controlled Silicidation of Metal Source/Drain in Silicon Nanowire MOSFETs

S. Migita1、Y. Morita1、N. Taoka1、W. Mizubayashi1、H. Ota1(1.AIST, Japan)
https://doi.org/10.7567/SSDM.2008.A-6-1
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