2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-6-4]Schottky-Barrier Height Tuning of Nickel Silicide on Epitaxial Silicon-Carbon Films with High Substitutional Carbon Content
P. S. Y. Lim1、R. T. P. Lee1、A. E. J. Lim1、A. T. Y. Koh1、M. Sinha1、D. Z. Chi2、Y. C. Yeo1(1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng., Singapore)
