2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-7-2]Additive Process Induced Strain (APIS) Technology for Lg = 30nm Band-Edge High-k/Metal Gate nMOSFET

M. M. Hussain1、K. Rader2、C. Smith3、C. Young1、S. Suthram4、C. Park1、M. Cruz1、P. D. Kirsch1、R. Jammy5(1.SEMATECH、2.Texas State Univ.、3.Univ. of North Texas、4.Univ. of Florida、5.IBM Assignee, USA)
https://doi.org/10.7567/SSDM.2008.A-7-2
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