2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-8-1]Low Vt Metal-Gate/High-k CMOS from Understanding the Mechanism to Innovative Solution (Invited)

A. Chin1,2、C. H. Cheng2、N. C. Su3、S. J. Wang3、C. C. Liao1,2、C. P. Chou2、H. L. Hwang1,4(1.Nano-Electronics Consortium of Taiwan、2.National Chiao Tung Univ.、3.National Cheng Kung Univ.、4.National Tsing Hua Univ., Taiwan)
https://doi.org/10.7567/SSDM.2008.A-8-1