2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-9-5]Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing

D. Ishikawa1、S. Kamiyama1、E. Kurosawa1、T. Aoyama1、Y. Nara1(1.Selete, Japan)
https://doi.org/10.7567/SSDM.2008.A-9-5
PDFダウンロードPDFダウンロード
戻る