2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-2]Enhancement-Mode In0.53Ga0.47As n-MOSFET with Self-aligned Gate-first Process and CVD HfAlO Gate Dielectric

J. Lin1、S. J. Lee1、H. J. Oh1、G. K. Dalapati2、D. Z. Chi2、G. Q. Lo3、D. L. Kwong3(1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)
https://doi.org/10.7567/SSDM.2008.B-1-2
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