2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-3]High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate

K. Ikeda1、Y. Yamashita1、M. Harada1、T. Yamamoto1、S. Nakaharai1、N. Hirashita1、Y. Moriyama1、T. Tezuka1、N. Taoka2、I. Watanabe3、N. Hirose3、N. Sugiyama1、S. Takagi2,4(1.MIRAI-ASET、2.MIRAI-ASRC、3.NICT、4.Univ. of Tokyo, Japan)
https://doi.org/10.7567/SSDM.2008.B-1-3
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