2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-2-4]Advantages of Densely Packed Multi-Wire Transistors with a Planar Gate Structure and a Low-k Buried Insulator over Planar SOI Devices

M. Ono1、K. Uchida2、T. Tezuka1(1.Toshiba Corp.、2.Tokyo Tech., Japan)
https://doi.org/10.7567/SSDM.2008.B-2-4
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