2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-3-1]Low GIDL Characteristics on Fin-FET with Source/Drain Extension Engineering for 22nm Node Low Power Devices
K. Hayashi1、T. Iwamatsu1、R. Tsuchiya2、K. Ishikawa1、T. Terada1、H. Shinohara1、K. Eikyu1、T. Uchida1、H. Oda1、Y. Inoue1(1.Renesas Tech. Corp.、2.Hitachi, Ltd., Japan)
