2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-3-3]Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain

J. W. Peng1,2,3、S. J. Lee2、G. C. Albert Liang2、N. Singh1、C. M. Ng3、G. Q. Lo1、D. L. Kwong1(1.Inst. of Microelectronics、2.National Univ. of Singapore、3.Chartered Semiconductor Manufacturing Ltd., Singapore)
https://doi.org/10.7567/SSDM.2008.B-3-3
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