2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
2008年9月23日〜9月26日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-3-5L]Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D
M. Nishikawa1、N. Tamura2、Y. Shimamune2、A. Hatada1、K. Ikeda2、T. Yamamoto2、T. Miyashita2、Y. S. Kim2、T. Kubo1、T. Sukegawa1、M. Fukuda1、K. Sukegawa2、H. Kurata2、M. Kase1、K. Hashimoto1(1.Fujitsu Microelectronics Ltd.、2.Fujitsu Labs. Ltd., Japan)
